DocumentCode
2730044
Title
Analysis of intrinsic small signal parameters in HEMTs
Author
Abdel Aziz, M. ; Banna, M.E. ; Elsayed, M.
Author_Institution
Air Defence Coll., Egypt
fYear
1998
fDate
24-26 Feb 1998
Abstract
A charge control model was developed which is based on a single analytical function that describes the dependence of the three charges in HEMTs on gate voltage. These charges include: 2DEG, AlGaAs free electrons and neutralized donors. Closed form expressions for the intrinsic small signal model parameters in linear and saturation regions were derived. The contributions of both the AlGaAs and neutralized donor charges, which were commonly ignored in early models, were studied at different gate and drain bias voltages
Keywords
capacitance; electric charge; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; 2DEG; AlGaAs; AlGaAs free electrons; HEMTs; charge control model; closed form expressions; drain bias voltages; gate voltage; gate voltages; intrinsic small signal parameters; linear region; neutralized donors; saturation region; Capacitance; Differential equations; Electrons; Equivalent circuits; HEMTs; MODFETs; Performance analysis; Signal analysis; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National
Conference_Location
Cairo
Print_ISBN
0-7803-5121-5
Type
conf
DOI
10.1109/NRSC.1998.711504
Filename
711504
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