Title :
CMOS versus SiGe BiCMOS, for RF transceivers design
Author :
Cathelin, Andreia ; Belot, Didier
Abstract :
A collection of slides from the authorpsilas conference presentation is given.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; transceivers; BiCMOS; RF transceivers design; SiGe; BiCMOS integrated circuits; CMOS process; Germanium silicon alloys; Global Positioning System; Heterojunction bipolar transistors; Integrated circuit noise; Radio frequency; Silicon germanium; Transceivers; Ultra wideband technology;
Conference_Titel :
Circuits and Systems for Communications, 2008. ECCSC 2008. 4th European Conference on
Conference_Location :
Bucharest
Print_ISBN :
978-1-4244-2419-1
Electronic_ISBN :
978-1-4244-2420-7
DOI :
10.1109/ECCSC.2008.4611643
