Title :
MOS-controlled diode (MCD) on silicon-on-insulator (SOI)
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
The performance of the diode is an importance factor in achieving good efficiency for a power integrated circuit. In this paper, a MOS-controlled diode (MCD) for power integrated circuits is presented. The proposed structure utilizes active control to switch the diode between unipolar and bipolar operating modes so that the device can operate at its optimum condition for both static and dynamic performances. The proposed MCD on SOI demonstrated significant advantage over a P-i-N diode or the body diode of an LDMOS. It is found that, with optimum control, it can reduce the diode reverse recovery loss by 10 times and the corresponding switch turn-on loss by a factor of 3, without sacrificing its on-state conduction voltage. The traditional trade-off between on-state voltage and reverse recovery speed can therefore be avoided and significant improvements in overall system efficiency can be achieved. Advantages of an integrated MCD over its discrete version are also discussed.
Keywords :
MIS devices; insulated gate bipolar transistors; power integrated circuits; power semiconductor diodes; silicon-on-insulator; MOS-controlled diode; on-state conduction voltage; power integrated circuit; reverse recovery loss; silicon-on-insulator; switch turn-on loss; Costs; Insulated gate bipolar transistors; MOSFET circuits; P-i-n diodes; Power MOSFET; Power integrated circuits; Semiconductor diodes; Silicon on insulator technology; Switches; Voltage control;
Conference_Titel :
Industrial Electronics Society, 2003. IECON '03. The 29th Annual Conference of the IEEE
Print_ISBN :
0-7803-7906-3
DOI :
10.1109/IECON.2003.1280657
