• DocumentCode
    2730215
  • Title

    Reliability of Ultra-thin Zirconium Dioxide (ZrO2) Films on Strained-Si

  • Author

    Bera, M.K. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur
  • fYear
    2006
  • fDate
    3-7 July 2006
  • Firstpage
    295
  • Lastpage
    300
  • Abstract
    This paper report on the reliability properties of microwave-plasma deposited ultrathin high-k gate dielectric (ZrO2 ) films on strained-Si/SiGe layers. Stress induced leakage current; trap centroid and charge trapping behavior under constant current and voltage stressing in both polarities have been studied
  • Keywords
    high-k dielectric thin films; integrated circuit reliability; leakage currents; ZrO2-Si-SiGe; charge trapping; constant current stress; constant voltage stress; high-k gate dielectric; microwave-plasma deposition; reliability property; stress induced leakage current; trap centroid; ultrathin dielectric film; CMOS technology; Electromagnetic heating; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon germanium; Stress; Substrates; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
  • Conference_Location
    Singapore
  • Print_ISBN
    1-4244-0205-0
  • Electronic_ISBN
    1-4244-0206-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2006.251049
  • Filename
    4017074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2730215