• DocumentCode
    2730259
  • Title

    100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

  • Author

    Gao, Fei ; Balakumar, S. ; Rui, Li ; Lee, S.J. ; Tung, Chib-Hang ; Du, Anyan ; Sudhiranjan, T. ; Kwong, Dim-Lee ; Hwang, W.S. ; Balasubramanian, N. ; Lo, Patrick ; Dong-Zhi, Chi

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore
  • fYear
    2006
  • fDate
    3-7 July 2006
  • Firstpage
    311
  • Lastpage
    313
  • Abstract
    Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented
  • Keywords
    Ge-Si alloys; MOSFET; condensation; nanotechnology; oxidation; substrates; 100 nm; HfO2-TaN; SGOI PMOSFET; Schottky PMOSFET; SiGe-Si; condensation approach; multistep oxidation; self-aligned process; Amorphous materials; Fabrication; Germanium silicon alloys; Hafnium; MOSFET circuits; Oxidation; Semiconductor films; Silicon germanium; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
  • Conference_Location
    Singapore
  • Print_ISBN
    1-4244-0205-0
  • Electronic_ISBN
    1-4244-0206-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2006.251052
  • Filename
    4017077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2730259