Title :
Detectivity Optimization of InGaAs Photon Emission Microscope Systems
Author :
Tan, S.L. ; Yim, K.H. ; Chan, D.S.H. ; Phang, J.C.H. ; Zhou, Y. ; Balk, L.J. ; Chua, C.M. ; Koh, L.S.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, National Univ. of Singapore
Abstract :
Although photon emission microscope (PEM) systems are widely used in integrated circuit failure analysis, there is no known quantitative baseline to assess and compare the overall sensitivity performance of PEM systems. This paper describes a method to quantify the overall sensitivity of PEM systems based on spectral detectivity measurements. It has been applied to HgCdTe (MCT) and InGaAs PEM systems. It is also applied to an InGaAs PEM system to quantify the change in the detectivity of the InGaAs PEM system as the temperature of the detector changes. The method is also used to compare the signal to noise ratio of an emission image by normal time integration with digital integration where many frames of an emission image is added up to produce a single emission image
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; gallium arsenide; indium compounds; integrated optoelectronics; mercury compounds; optical variables measurement; photodetectors; tellurium compounds; HgCdTe; InGaAs; detectivity optimization; digital integration; emission image; integrated circuit failure analysis; normal time integration; photon emission microscope systems; sensitivity performance; signal to noise ratio; spectral detectivity measurements; Cooling; Costs; Detectors; Failure analysis; Indium gallium arsenide; Microscopy; Photonic band gap; Photonic integrated circuits; Signal to noise ratio; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251053
