Title :
Distinction of Photo-Electric and Thermal Effects in a MOSFET by 1064 nm Laser Stimulation
Author :
Brahma, Sanjib Kumar ; Heinig, Jürgen ; Glowacki, Arkadiusz ; Leihkauf, Reiner ; Boit, Christian
Author_Institution :
Berlin Univ. of Technol.
Abstract :
Thermal (TLS) and photoelectric (PLS) laser stimulation techniques are now widely used in failure analysis of integrated circuits. The stimulation signatures when using a 1064 nm laser are often a combination of PLS and TLS. This work presents a quantitative investigation of 1064 nm laser stimulation effects on single NMOSFET devices that isolates the two contributors. The results support the basic understanding of the static and dynamic device behavior when stimulated by 1064nm laser
Keywords :
MOSFET; laser beam effects; 1064 nm; MOSFET; dynamic device behavior; integrated circuit failure analysis; laser stimulation effects; photoelectric effects; static device behavior; thermal effects; Charge carrier processes; FETs; Failure analysis; Integrated circuit technology; Laser beams; Laser transitions; MOSFET circuits; Silicon devices; Testing; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.250982
