DocumentCode
2730345
Title
Application of Atomic Force Probing on 90nm DRAM Cell Failure Analysis
Author
Yeh, Yu-Ching ; Lin, Chia-Lung ; Chen, Bi-Jen ; Tseng, Yuan-Wei ; Russell, Jeremy D.
fYear
2006
fDate
3-7 July 2006
Firstpage
340
Lastpage
343
Abstract
This article presents a novel method to identify marginal faults in DRAM product via atomic force probing. Failing cells which are difficult to be identified by traditional methods were easily localized by current imaging. In addition, current-voltage curves were useful for judging failure root causes
Keywords
DRAM chips; atomic force microscopy; failure analysis; 90 nm; DRAM failure analysis; atomic force probing; failure root causes; marginal faults; Atomic beams; Atomic force microscopy; Character generation; Failure analysis; Page description languages; Probes; Random access memory; Transistors; Tungsten; Virtual colonoscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location
Singapore
Print_ISBN
1-4244-0205-0
Electronic_ISBN
1-4244-0206-9
Type
conf
DOI
10.1109/IPFA.2006.250983
Filename
4017082
Link To Document