Comparison of MBE grown InSb on CU substrates using different sacrificial layers

Author

Seaford, M.L. ; Tomich, D.H. ; Eyink, K.G. ; Lampert, W.V. ; Ejeckam, F.E. ; Lo, Y.H.

Author_Institution

Res. & Dev. Center, Wright-Patterson AFB, OH, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

29

Lastpage

32

Abstract

InSb epitaxial layers with approximately 15% lattice mismatched to GaAs were grown on a conventional GaAs substrate and compliant universal (CU) substrates using various sacrificial layers. Transmission electron microscopy studies showed dislocation free InSb films grown on the CU substrate using the AlGaAs sacrificial layer, whereas the InSb films on the normal GaAs substrate and the CU substrate with the InGaP sacrificial layer exhibited dislocation densities as high as 10¹¹ cm^-2. Reciprocal space maps of the (004) peak for the dislocation free InSb layer revealed a large mosaic spread of -0.25°. Using atomic force microscopy on the dislocation free InSb layer, the mosaic spread was found to be generated by a periodic surface undulation with a three micron period and 700 Å amplitude

Keywords

III-V semiconductors; atomic force microscopy; indium compounds; semiconductor epitaxial layers; surface topography; transmission electron microscopy; AFM; CU substrates; GaAs; InSb; MBE grown layers; TEM; atomic force microscopy; compliant universal substrates; dislocation free films; molecular beam epitaxial layers; mosaic spread; periodic surface undulation; sacrificial layers; transmission electron microscopy; Atomic force microscopy; Bonding; Capacitive sensors; Epitaxial layers; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Substrates; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711536

Filename

711536