DocumentCode
2730712
Title
Efficient full-wave modeling of high density TSVs for 3D integration
Author
Gu, Xiaoxing ; Wu, Boping ; Ritter, Mark ; Tsang, Leung
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2010
fDate
1-4 June 2010
Firstpage
663
Lastpage
666
Abstract
This paper presents a full-wave electromagnetic approach for modeling the electrical performance of massively-coupled and coated through silicon vias in a sandwiched SiO2 -Si-SiO2 substrate. The planar guided wave is analyzed to determine the fundamental mode and high order modes in stratified media. Cylindrical wave expansions and Foldy-Lax equations for multiple scattering techniques are used to efficiently calculate the couplings among the vias. The effect of SiO2 coating around the via is modeled by general T-matrix coefficients. Both silicon loss and copper loss are included in this approach. Numerical simulations of insertion loss, return loss and crosstalk of 1-by-3 and 4-by-4 through silicon via arrays are presented and compared with general-purpose field-solver.
Keywords
Coatings; Copper; Crosstalk; Electromagnetic modeling; Electromagnetic scattering; Equations; Insertion loss; Nonhomogeneous media; Numerical simulation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490794
Filename
5490794
Link To Document