Author :
Kirihata, Toshiaki ; Mueller, G. ; Ji, Baojian ; Frankowsky, G. ; Ross, James ; Terletzki, H. ; Netis, D. ; Weinfurtner, O. ; Hanson, D. ; Daniel, Grivon ; Hsu, L. ; Storaska, D. ; Reith, A. ; Hug, Matthieu ; Guay, Kevin ; Selz, M. ; Poechmueller, P. ; Ho
Keywords :
DRAM chips; MOS memory circuits; memory architecture; 1 Gbit; 1 V; 8 bit; DDR SDRAM; double-data-rate synchronous DRAM; hierarchical column-select operation; hierarchical prefetch; hybrid bitline architecture; single-ended read-write-drive circuitry; CMOS technology; Current measurement; DRAM chips; Packaging; Random access memory; SDRAM; Semiconductor device measurement; Solid state circuits; Very large scale integration; X-ray lithography;