DocumentCode :
2730836
Title :
SOI technology performance and modelling
Author :
Pelloie, J.L. ; Auberton-Herv, A.J. ; Raynaud, C. ; Faynot, O.
Author_Institution :
CEA, Centre d´Etudes Nucleaires de Grenoble, France
fYear :
1999
fDate :
17-17 Feb. 1999
Firstpage :
428
Lastpage :
429
Abstract :
Power consumption is now a major concern for high-performance digital systems and portable applications. The most efficient technological approach for reducing power consumption is power-supply voltage (V/sub dd/) scaling. Threshold voltage (V/sub t/) must consequently be reduced to maintain speed but its lowest value is set by the maximum tolerable off-current (I/sub off/). Various SOI device architectures (fully-depleted or FD, partially or non-fully depleted or PD) are suggested and used either for high-speed or low-power applications. Emergence of CMOS/SOI technologies was not possible in the past because of the lack of a reliable SOI substrate in large quantities. SIMOX substrate quality is improved, and SOI substrates are now available using different wafer-bonding techniques. From a technology point of view, SOI is now mature enough to be used in commercial products.
Keywords :
digital integrated circuits; integrated circuit modelling; integrated circuit technology; low-power electronics; silicon-on-insulator; wafer bonding; SIMOX substrate quality; SOI technology; fully-depleted; high-performance digital systems; low-power applications; maximum tolerable off-current; nonfully depleted; portable applications; power consumption; power-supply voltage scaling; threshold voltage; wafer-bonding techniques; Inverters; Length measurement; MOSFET circuits; Solid modeling; Solid state circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
0-7803-5126-6
Type :
conf
DOI :
10.1109/ISSCC.1999.759338
Filename :
759338
Link To Document :
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