Title :
In-situ Formation of a Copper Silicide Cap For TDDB and Electromigration Improvement
Author :
Chattopadhyay, K. ; van Schravendijk, B. ; Mountsier, T.W. ; Alers, G.B. ; Hornbeck, M. ; Wu, H.-J. ; Shaviv, R. ; Harm, G. ; Vitkavage, D. ; Apen, E. ; Yu, Y. ; Havemann, R.
Author_Institution :
Novellus Syst., San Jose, CA
Abstract :
Self-aligned barrier processes are being investigated as an alternative to standard dielectric barrier processes for the 65 nm technology nodes and beyond. Variations in the dielectric barrier process can modulate the copper-dielectric interface and the SiC/low k interface to improve dielectric and electromigration reliability. For the first time, in this paper, we will show that optimization of both the self aligned barrier and the SiC film can improve the adhesion between both the Cu and the dielectric layer on top, resulting in a 10-1000times increase in time-dependent dielectric breakdown lifetime
Keywords :
copper; dielectric thin films; electric breakdown; electromigration; semiconductor thin films; silicon compounds; wide band gap semiconductors; 65 nm; Cu; SiC; copper silicide cap; copper-dielectric interface; dielectric barrier process; dielectric layer; dielectric reliability; electromigration improvement; electromigration reliability; low k interface; self-aligned barrier process; time dependent dielectric breakdown; Adhesives; Copper; Dielectric breakdown; Electric breakdown; Electromigration; Silicides; Silicon carbide; Surface resistance; Surface treatment; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251203
