Title :
ESD MM Failures Resulting from Transient Reverse Currents
Author :
Whitfield, J. ; Gill, C. ; Yang, J. ; Xu, H. ; Zhan, C. ; Baumert, B. ; Zunino, M.
Abstract :
We report on machine model (MM) failures resulting from transient reverse current. The MM waveform oscillates between positive and negative voltage, causing reverse recovery current and current crowding failure on diode fingers. The unipolar nature of TLP measurement and HBM cannot capture this failure mechanism
Keywords :
MOSFET; electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device reliability; semiconductor diodes; ESD; HBM; TLP measurement; machine model failures; reverse recovery current; transient reverse currents; Biological system modeling; Circuits; Electrostatic discharge; MOS devices; Power system transients; Protection; Semiconductor diodes; Stress; Transmission line measurements; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251205
