DocumentCode
2731020
Title
ESD MM Failures Resulting from Transient Reverse Currents
Author
Whitfield, J. ; Gill, C. ; Yang, J. ; Xu, H. ; Zhan, C. ; Baumert, B. ; Zunino, M.
fYear
2006
fDate
26-30 March 2006
Firstpage
136
Lastpage
139
Abstract
We report on machine model (MM) failures resulting from transient reverse current. The MM waveform oscillates between positive and negative voltage, causing reverse recovery current and current crowding failure on diode fingers. The unipolar nature of TLP measurement and HBM cannot capture this failure mechanism
Keywords
MOSFET; electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device reliability; semiconductor diodes; ESD; HBM; TLP measurement; machine model failures; reverse recovery current; transient reverse currents; Biological system modeling; Circuits; Electrostatic discharge; MOS devices; Power system transients; Protection; Semiconductor diodes; Stress; Transmission line measurements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251205
Filename
4017146
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