• DocumentCode
    2731024
  • Title

    Wavelength tunable UV laser stimulated growth of AlxGa 1-x by OMVPE

  • Author

    Wankerl, A. ; Shealy, J.R.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    UV stimulated OMVPE growth of AlGaAs from TMG, TMA and arsine at 500°C was studied using a wavelength tunable pulsed laser in the range from 235 nm to 255 nm. We observe an abrupt wavelength edge at 252 nm, below which the stimulation rate is constant and above which the growth enhancement ceases. We demonstrate a high growth contrast of 3.2:1 and show that the growth enhancement is due to photostimulation of the adlayer. The formation of a periodic surface structure agrees with theory and results in growth directions deviating from [100]. Good crystal quality was determined by Raman spectroscopy
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser beam effects; semiconductor growth; surface structure; vapour phase epitaxial growth; 235 to 255 nm; 252 nm; AlxGa1-x; AlGaAs; OMVPE; Raman spectroscopy; adlayer photostimulation; growth enhancement; high growth contrast; periodic surface structure; stimulation rate; wavelength tunable UV laser stimulated growth; Atomic force microscopy; Gallium arsenide; Gas lasers; Laser beams; Laser modes; Optical pulses; Pulsed laser deposition; Raman scattering; Scanning electron microscopy; Tunable circuits and devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711541
  • Filename
    711541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2731024