Results of 3" and 4" low-gradient s.i. GaAs growth under controlled vapor pressure

Author

Neubert, M. ; Rudolph, P. ; Seifert, M.

Author_Institution

Inst. fur Kristallzuchtung, Berlin, Germany

fYear

1997

fDate

8-11 Sep 1997

Firstpage

53

Lastpage

56

Abstract

The VCZ technique is promising to grow s.i. GaAs with improved structural quality. Its main idea is to pull the crystals in low temperature gradients to reduce the thermally induced stress. The dislocation density can reproducibly be decreased down to 10⁴ cm^-2 and below in 3" and 4" crystals. Within the best samples the radial dislocation density distribution was markedly homogenized (total seater of a factor of 2 to 3). Electrical parameters of VCZ crystals roughly match those of conventional LEC material

Keywords

III-V semiconductors; crystal growth from melt; dislocation density; gallium arsenide; semiconductor growth; 3 in; 4 in; GaAs; GaAs growth; controlled vapor pressure; dislocation density; low temperature gradients; radial dislocation density distribution; thermally induced stress; Crystalline materials; Crystals; Etching; Gallium arsenide; Image analysis; Measurement standards; Stress measurement; Temperature; Thermal stresses; Vibration measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711545

Filename

711545