Title :
Modeling and simulation of short-channel MOSFETs operating in deep weak inversion
Author :
Vann, J.M. ; Smith, M.C. ; Simpson, M.L. ; Thomas, C.E. ; Paulus, M.J. ; Moore, J.A. ; Baylor, L.R. ; Rochelle, J.M. ; Lowndes, D.H. ; Geohegan, D.B. ; Jellison, G.E. ; Merkulov, V.I. ; Puretzky, A.A. ; Voelkl, E.
Author_Institution :
Tennessee Univ., Knoxville, TN, USA
Abstract :
As circuit densities continue to increase and battery operated systems demand lower power operation, more designs will incorporate small geometry (short and narrow) MOSFETs operating in deep weak inversion. Our research into massively parallel electron emitter arrays for lithographic applications has included the design of short-channel MOSFETs operating at currents as small as 100 pA. Simulation of these weakly inverted, small geometry devices required the development of appropriate model parameters. We report our method for determining BSIM model parameters for short channel devices operating in the deep subthreshold region. In addition we show our modeling results with a commercial 0.5 μm CMOS process
Keywords :
MOSFET; electron beam lithography; low-power electronics; semiconductor device models; 0.5 micron; 100 pA; BSIM model parameters; CMOS process; circuit densities; deep weak inversion; lithographic applications; lower power operation; massively parallel electron emitter arrays; short-channel MOSFETs; simulation; small geometry transistors; Batteries; CMOS process; CMOS technology; Geometry; Laboratories; Lithography; MOSFETs; Semiconductor device modeling; Solid modeling; Threshold voltage;
Conference_Titel :
Circuits and Systems, 1998. Proceedings. 1998 Midwest Symposium on
Conference_Location :
Notre Dame, IN
Print_ISBN :
0-8186-8914-5
DOI :
10.1109/MWSCAS.1998.759426
