Title :
Impact of growth interruption on interface roughness of MOCVD grown InGaAs/InAlAs studied by photoreflectance spectroscopy
Author :
Bru-Chevallier, C. ; Baltagi, Y. ; Guillot, G. ; Hong, K. ; Pavlidis, D.
Author_Institution :
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
The interface quality of InAs/InGaAs heterostructures used in High-Electron-Mobility-Transistors (HEMTs) is evaluated as a function of growth interruption time, using photoreflectance spectroscopy on 250 a InGaAs single quantum wells between InAlAs layers. Assessment of the interface roughness is derived from the broadening of the high order quantum confined transitions. The higher the growth interruption time, the smaller the interface roughness as derived from PR measurements. The results are in good agreement with higher electron mobility values measured by Hall effect
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; gallium arsenide; indium compounds; interface structure; photoreflectance; semiconductor growth; semiconductor heterojunctions; surface topography; HEMT; Hall effect; High-Electron-Mobility-Transistors; InGaAs-InAlAs; MOCVD grown InGaAs/InAlAs; growth interruption; interface quality; interface roughness; photoreflectance spectroscopy; single quantum wells; Electron mobility; HEMTs; Hall effect; Indium compounds; Indium gallium arsenide; MOCVD; MODFETs; Potential well; Spectroscopy; Time measurement;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711547
