Title :
Large-Scale Time Characterization and Analysis of PBTI In HFO2/Metal Gate Stacks
Author :
Mitard, J. ; Garros, X. ; Nguyen, L.P. ; Leroux, C. ; Ghibaudo, G. ; Martin, F. ; Reimbold, G.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
Many electrical properties of metal/high-k gate stack are dominated by defects. These defects play an important role in reliability issues in particular positive bias temperature instabilities (PBTI). In this paper, we investigate PBTI with a time resolved measurement technique allowing a large-scale time characterization. This technique allows us to separate different mechanisms, namely fast and slow trapping, newly slow stress-generated traps and finally positive charges. We clearly evidence which of them are or are not activated by temperature. We explain how to take into account these mechanisms for a precise lifetime extrapolation
Keywords :
electron traps; field effect transistors; hafnium compounds; high-k dielectric thin films; interface states; semiconductor device reliability; thermal stability; time resolved spectra; HfO2; PBTI; electrical properties; high-k gate stack; lifetime extrapolation; metal gate stacks; positive bias temperature instabilities; positive charges; reliability issues; stress-generated traps; time resolved measurement technique; trapping; Current measurement; Dielectrics; Extrapolation; Hafnium oxide; Kinetic theory; Large-scale systems; Measurement techniques; Temperature; Threshold voltage; Time measurement;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251212
