Process and temperature performance of a CMOS beta-multiplier voltage reference

Author

Liu, Song ; Baker, R. Jacob

Author_Institution

Microelectron. Res. Center, Univ. of Idaho, Boise, ID, USA

fYear

1998

fDate

9-12 Aug 1998

Firstpage

33

Lastpage

36

Abstract

The beta multiplier voltage reference (BMVR) is discussed as a direct replacement for the bandgap voltage reference in a CMOS process especially when substrate current is a concern. Performance of the BMVR with regard to temperature and process variations is covered. Experimental results from a 2-micron MOSIS test chip indicate that the BMVR can be tuned to within 10 mV of a desired value while maintaining a temperature coefficient below 1000 ppm/C and a supply sensitivity under 50 mV/V

Keywords

CMOS integrated circuits; integrated circuit testing; multiplying circuits; power supply circuits; reference circuits; 2 micron; CMOS beta-multiplier voltage reference; MOSIS test chip; bandgap voltage reference; process variations; substrate current; supply sensitivity; temperature coefficient; temperature variations; CMOS process; Circuits; Equations; Immune system; MOSFETs; Photonic band gap; Resistors; Temperature sensors; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1998. Proceedings. 1998 Midwest Symposium on

Conference_Location

Notre Dame, IN

Print_ISBN

0-8186-8914-5

Type

conf

DOI

10.1109/MWSCAS.1998.759429

Filename

759429