Impact of Crystalline Phase of Ni-Full-Silicide Gate Electrode on TDDB Reliability of HfSiON Gate Stacks

Author

Onizawa, Takashi ; Terai, Masayuki ; Toda, Akio ; Oshida, Makiko ; Ikarashi, Nobuyuki ; Hase, Takashi ; Fujieda, Shinji ; Watanabe, Hirohito

Author_Institution

NEC Corp., Sagamihara

fYear

2006

fDate

26-30 March 2006

Firstpage

195

Lastpage

199

Abstract

We investigated the influences of gate metals (poly-Si, NiSi, Ni ₃Si) on the time dependent dielectric breakdown (TDDB) reliability of phase-controlled Ni-full-silicide/HfSiON n-FETs. The TDDB reliability of the NiSi-electrode FETs was comparable to that of poly-Si-electrode FETs. However, the reliability was degraded by further Ni-enriching to Ni₃Si. We presume that the degradation of the base SiO₂ layer is responsible for this. We do not relate the TDDB degradation to Ni diffusion into the insulator, but rather to the strain that is higher in Ni₃Si samples

Keywords

electric breakdown; field effect transistors; hafnium compounds; high-k dielectric thin films; nickel compounds; semiconductor device reliability; silicon compounds; stress effects; FET; HfSiON; Ni₃; NiSi; SiO₂; crystalline phase; gate electrode; gate metals; gate stacks; high-k gate stack; mechanical strain; phase-controlled Ni-full silicide; time dependent dielectric breakdown reliability; Annealing; Crystallization; Degradation; Electrodes; Electron beams; High K dielectric materials; High-K gate dielectrics; Metal-insulator structures; Silicidation; Silicon; TDDB reliability; mechanical strain; metal/high-k gate stack; phase-controlled Ni-full-silicide (PC-FUSI);

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251216

Filename

4017157