Title :
Impact of Crystalline Phase of Ni-Full-Silicide Gate Electrode on TDDB Reliability of HfSiON Gate Stacks
Author :
Onizawa, Takashi ; Terai, Masayuki ; Toda, Akio ; Oshida, Makiko ; Ikarashi, Nobuyuki ; Hase, Takashi ; Fujieda, Shinji ; Watanabe, Hirohito
Author_Institution :
NEC Corp., Sagamihara
Abstract :
We investigated the influences of gate metals (poly-Si, NiSi, Ni 3Si) on the time dependent dielectric breakdown (TDDB) reliability of phase-controlled Ni-full-silicide/HfSiON n-FETs. The TDDB reliability of the NiSi-electrode FETs was comparable to that of poly-Si-electrode FETs. However, the reliability was degraded by further Ni-enriching to Ni3Si. We presume that the degradation of the base SiO2 layer is responsible for this. We do not relate the TDDB degradation to Ni diffusion into the insulator, but rather to the strain that is higher in Ni3Si samples
Keywords :
electric breakdown; field effect transistors; hafnium compounds; high-k dielectric thin films; nickel compounds; semiconductor device reliability; silicon compounds; stress effects; FET; HfSiON; Ni3; NiSi; SiO2; crystalline phase; gate electrode; gate metals; gate stacks; high-k gate stack; mechanical strain; phase-controlled Ni-full silicide; time dependent dielectric breakdown reliability; Annealing; Crystallization; Degradation; Electrodes; Electron beams; High K dielectric materials; High-K gate dielectrics; Metal-insulator structures; Silicidation; Silicon; TDDB reliability; mechanical strain; metal/high-k gate stack; phase-controlled Ni-full-silicide (PC-FUSI);
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251216
