Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs

Author

Park, Hokyung ; Choi, Rino ; Song, Seung Chul ; Chang, Man ; Young, Chadwin D. ; Bersuker, Gennadi ; Lee, Byoung Hun ; Lee, Jack C. ; Hwang, Hyunsang

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.

fYear

2006

fDate

26-30 March 2006

Firstpage

200

Lastpage

203

Abstract

To understand hot carrier effects on high-k dielectrics without cold carrier trapping, we have investigated hot carrier induced damage with channel and substrate hot carrier stresses. Comparing substrate hot carrier stress, channel hot carrier stress showed significant cold carrier injection during hot carrier injection. Using a relaxation bias, we are able to evaluate hot carrier induced permanent trap generation by decoupling cold carrier trapping

Keywords

MOSFET; electron traps; hafnium compounds; high-k dielectric thin films; interface states; semiconductor device reliability; stress effects; HfO₂; cold carrier injection; cold carrier trapping; high-k dielectrics; hot carrier injection; hot carrier stresses; nMOSFET; permanent trap generation; relaxation bias; reliability; Charge pumps; Dielectric substrates; Hafnium oxide; Hot carrier effects; Hot carriers; MOSFETs; Materials science and technology; Stress; Substrate hot electron injection; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251217

Filename

4017158