• DocumentCode
    2731477
  • Title

    X-Ray Inspection-Induced Latent Damage in DRAM

  • Author

    Ditali, Akram ; Ma, Manny ; Johnston, Michael

  • Author_Institution
    Micron Technol. Inc., Boise, ID
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    266
  • Lastpage
    269
  • Abstract
    For quality verification, an X-ray inspection process is commonly being used for evaluating obscured and defective solder joints in surface mount technologies such as BGA´s and flip chips. Integrated circuits subjected to any form of radiation, ionizing or non-ionizing, may incur some amount of damage depending on the absorbed dose. Though most X-ray inspections for high-quality imaging require ionizing dose amounts that are considered inconsequential for device failure or non-functionality, the degree of latent damage must be carefully considered. This paper discusses X-ray induced vulnerabilities of high-density DRAM exposed to low ionizing radiation levels typical in X-ray inspection systems. We look at critical parameters and their sensitivity in relation to varying dose amounts of X-ray irradiation. In consideration of different methodologies of reducing radiation dose amounts and limiting device exposure, we propose a procedure for attenuating potentially harmful X-ray radiation levels while preserving quality images
  • Keywords
    DRAM chips; ball grid arrays; flip-chip devices; inspection; integrated circuit testing; radiation effects; solders; surface mount technology; DRAM chips; X-ray inspection; X-ray irradiation; ball grid arrays; device failure; flip chips; integrated circuits; latent damage; quality verification; radiation dose; solder joints; surface mount technology; Annealing; Degradation; Extraterrestrial measurements; Inspection; Integrated circuit technology; Ionizing radiation; Random access memory; Surface-mount technology; Testing; X-ray imaging; Junction Leakage; Latent Damage; Refresh degradation Thermal Annealing; X-ray induced damage; X-ray radiation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251226
  • Filename
    4017167