DocumentCode :
2731477
Title :
X-Ray Inspection-Induced Latent Damage in DRAM
Author :
Ditali, Akram ; Ma, Manny ; Johnston, Michael
Author_Institution :
Micron Technol. Inc., Boise, ID
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
266
Lastpage :
269
Abstract :
For quality verification, an X-ray inspection process is commonly being used for evaluating obscured and defective solder joints in surface mount technologies such as BGA´s and flip chips. Integrated circuits subjected to any form of radiation, ionizing or non-ionizing, may incur some amount of damage depending on the absorbed dose. Though most X-ray inspections for high-quality imaging require ionizing dose amounts that are considered inconsequential for device failure or non-functionality, the degree of latent damage must be carefully considered. This paper discusses X-ray induced vulnerabilities of high-density DRAM exposed to low ionizing radiation levels typical in X-ray inspection systems. We look at critical parameters and their sensitivity in relation to varying dose amounts of X-ray irradiation. In consideration of different methodologies of reducing radiation dose amounts and limiting device exposure, we propose a procedure for attenuating potentially harmful X-ray radiation levels while preserving quality images
Keywords :
DRAM chips; ball grid arrays; flip-chip devices; inspection; integrated circuit testing; radiation effects; solders; surface mount technology; DRAM chips; X-ray inspection; X-ray irradiation; ball grid arrays; device failure; flip chips; integrated circuits; latent damage; quality verification; radiation dose; solder joints; surface mount technology; Annealing; Degradation; Extraterrestrial measurements; Inspection; Integrated circuit technology; Ionizing radiation; Random access memory; Surface-mount technology; Testing; X-ray imaging; Junction Leakage; Latent Damage; Refresh degradation Thermal Annealing; X-ray induced damage; X-ray radiation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251226
Filename :
4017167
Link To Document :
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