• DocumentCode
    2731488
  • Title

    TSV manufacturing yield and hidden costs for 3D IC integration

  • Author

    Lau, John H.

  • Author_Institution
    Electron. & Optoelectron. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    1031
  • Lastpage
    1042
  • Abstract
    3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general, the TSV (through-silicon-via) separates the 3D IC packaging and 3D IC/Si integrations, i.e., the latter two use TSV, but 3D IC packaging does not. TSV for 3D integration is >26 years old technology, which (with a new concept that every chip could have two active surfaces) is the focus of this study. Emphasis is placed on the TSV manufacturing yield and hidden costs. A 3D integration roadmap is also provided.
  • Keywords
    Assembly; Circuit testing; Costs; Integrated circuit packaging; Integrated circuit testing; Manufacturing; Mass production; Stacking; Three-dimensional integrated circuits; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490828
  • Filename
    5490828