DocumentCode :
2731494
Title :
Two-dimensional surface emitting photonic crystal laser with hybrid triangular-graphite structure
Author :
Martínez, L.J. ; Alén, B. ; Prieto, I. ; Seassal, C. ; Viktorovitch, P. ; Galisteo-López, J.F. ; Galli, M. ; Andreani, L.C. ; Postigo, P.A.
Author_Institution :
Inst. de Microelectron. de Madrid (IMM-CNM- CSIC), Tres Cantos, Spain
fYear :
2009
fDate :
June 28 2009-July 2 2009
Firstpage :
1
Lastpage :
4
Abstract :
Laser emission of a compact surface-emitting microlaser, optically pumped and operating around 1.55 mum at room temperature is presented. The two-dimensional photonic crystal is conformed in a hybrid triangular-graphite lattice designed for vertical emission. The structures have been fabricated on InP slabs. The heterostructure consists of four In0.65As0.35P/InP quantum wells grown on an InP substrate by molecular beam epitaxy and it is transferred onto a silicon-on-silica substrate by wafer bonding (SiO2 thickness = 0.9 plusmn 0.1 mm). Standard techniques of electron-beam lithography, reactive ion beam etching and reactive ion-etching have been used for the patterning. The optical characterization was performed by micro-photoluminescence spectroscopy. Single-mode, strongly polarized laser emission has been achieved with quality factors Q exceeding 6000.
Keywords :
III-V semiconductors; Q-factor; electron beam lithography; indium compounds; integrated optics; laser modes; micro-optics; molecular beam epitaxial growth; optical fabrication; optical pumping; photoluminescence; photonic crystals; quantum well lasers; semiconductor quantum wells; sputter etching; surface emitting lasers; wafer bonding; In0.65As0.35P-InP; InP; Si-SiO2; compact surface-emitting microlaser; electron-beam lithography; heterostructure; hybrid triangular-graphite structure; microphotoluminescence spectroscopy; molecular beam epitaxy; optical characterization; optical pumping; patterning; quality factors; quantum wells; reactive ion beam etching; silicon-on-silica substrate; single-mode laser emission; slabs; strongly polarized laser emission; temperature 293 K to 298 K; two-dimensional surface emitting photonic crystal laser; vertical emission; wafer bonding; Indium phosphide; Laser excitation; Lattices; Optical pumping; Photonic crystals; Pump lasers; Stimulated emission; Substrates; Surface emitting lasers; Temperature; optoelectronics; photonic crystals; photonic integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on
Conference_Location :
Azores
Print_ISBN :
978-1-4244-4825-8
Electronic_ISBN :
978-1-4244-4827-2
Type :
conf
DOI :
10.1109/ICTON.2009.5185267
Filename :
5185267
Link To Document :
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