Title :
Improved precision nonlinear PHEMT models
Author :
Thomas, D.G. ; Branner, G.R. ; Huang, Bo
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA
Abstract :
This paper provides a highly efficient procedure for developing precision “global” nonlinear PHEMT models. The process is shown to provide a single set of parameters which produce very good agreement between measured and modeled PHEMT Id, Vds , gm and gd characteristics
Keywords :
high electron mobility transistors; semiconductor device models; drain current; drain-to-source voltage; nonlinear PHEMT models; precision global models; single parameter set; transconductance; Circuit simulation; Computational modeling; Computer simulation; Current measurement; Equations; HEMTs; MESFETs; PHEMTs; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems, 1998. Proceedings. 1998 Midwest Symposium on
Conference_Location :
Notre Dame, IN
Print_ISBN :
0-8186-8914-5
DOI :
10.1109/MWSCAS.1998.759443
