• DocumentCode
    2731507
  • Title

    Improved precision nonlinear PHEMT models

  • Author

    Thomas, D.G. ; Branner, G.R. ; Huang, Bo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Davis, CA
  • fYear
    1998
  • fDate
    9-12 Aug 1998
  • Firstpage
    96
  • Lastpage
    99
  • Abstract
    This paper provides a highly efficient procedure for developing precision “global” nonlinear PHEMT models. The process is shown to provide a single set of parameters which produce very good agreement between measured and modeled PHEMT Id, Vds , gm and gd characteristics
  • Keywords
    high electron mobility transistors; semiconductor device models; drain current; drain-to-source voltage; nonlinear PHEMT models; precision global models; single parameter set; transconductance; Circuit simulation; Computational modeling; Computer simulation; Current measurement; Equations; HEMTs; MESFETs; PHEMTs; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1998. Proceedings. 1998 Midwest Symposium on
  • Conference_Location
    Notre Dame, IN
  • Print_ISBN
    0-8186-8914-5
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1998.759443
  • Filename
    759443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2731507