Circularly polarized lasing in a (110)-oriented VCSEL with InGaAs/GaAs QWs

Author

Kawaguchi, Hitoshi

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan

fYear

2009

fDate

June 28 2009-July 2 2009

Firstpage

1

Lastpage

4

Abstract

We fabricated and characterized a vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs). Circularly polarized lasing in the (110) VCSEL by optical injection of spin-polarized electrons has been demonstrated at 77 K and room temperature. A high degree of circular polarization, 0.94, was observed at 77 K, reflecting the long electron spin relaxation time in the (110) MQWs.

Keywords

gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; semiconductor quantum wells; spin dynamics; surface emitting lasers; InGaAs-GaAs; VCSEL; circularly polarized lasing; electron spin relaxation time; multiple quantum wells; optical injection; spin dynamics; spin-polarized electrons; temperature 293 K to 298 K; temperature 77 K; vertical-cavity surface-emitting laser fabrication; Electron optics; Gallium arsenide; Indium gallium arsenide; Materials science and technology; Optical polarization; Optical pumping; Quantum well devices; Quantum well lasers; Temperature; Vertical cavity surface emitting lasers; (110)-oriented quantum well; VCSEL; circularly polarized lasing; spin dynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on

Conference_Location

Azores

Print_ISBN

978-1-4244-4825-8

Electronic_ISBN

978-1-4244-4827-2

Type

conf

DOI

10.1109/ICTON.2009.5185270

Filename

5185270