Title :
Field Degradation of Memory Components from Hot Carriers
Author :
Bornstein, William ; Dunn, Robert ; Spielberg, Tony
Author_Institution :
IBM Technol. & Qualification, East Fishkill, NY
Abstract :
Over the past three years IBM has experienced two independent component field incidents from hot carriers. Each of these events occurred on procured memory devices. We investigated the root cause failure analysis, stresses performed, failure modeling, and pertinent application conditions. We conclude by showing how application voltages and duty cycle play critical roles in hot carrier degradation
Keywords :
SRAM chips; failure analysis; hot carriers; integrated circuit reliability; SRAM chips; duty cycle; failure analysis; field degradation; hot carriers; memory components; Circuits; Clocks; Degradation; Failure analysis; Hot carriers; Random access memory; Semiconductor device measurement; Stress; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251231
