DocumentCode
2731625
Title
Flash Memory Field Failure Mechanisms
Author
Muroke, Pekka
Author_Institution
Nokia Corp.
fYear
2006
fDate
26-30 March 2006
Firstpage
313
Lastpage
316
Abstract
This paper presents a study of flash memory field failures encountered in mobile phone applications. Failure analyses carried out by the flash memory manufacturers have been surveyed, and the failure root causes have been classified. Failure mechanism distributions are presented. Failures related to the manufacturing process defects are the dominant ones in the analyzed failure cases. Defect control and screening are key factors to field EFR (early failure rate) control, monitoring and improvement
Keywords
circuit reliability; failure analysis; flash memories; mobile handsets; defect control; early failure rate; failure analysis; flash memory field failures; manufacturing process defects; mobile phones; Costs; Degradation; Dielectric losses; Electronic equipment testing; Failure analysis; Flash memory; Mobile handsets; Nonvolatile memory; Stress; Voltage; EFR; Flash reliability; NOR flash; field failure;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251235
Filename
4017175
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