Title :
Substrate Majority Carrier Induced NLDMOS Failure and Its Prevention in Advanced Smart Power Technologies
Author :
Zhu, R. ; Khemka, V. ; Bose, A. ; Roggenbauer, T.
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ
Abstract :
This paper discusses substrate majority carrier conduction and prevention for a NLDMOS device in smart power technologies. A multi-iso isolated NLDMOS is proposed and experimentally verified to eliminate the problem. Trade-off between device size, safe operating area, substrate current and NLDMOS device power dissipation has been studied
Keywords :
charge injection; power MOSFET; NLDMOS device; carrier conduction; power dissipation; safe operating area; smart power technologies; substrate current; Automotive engineering; DC motors; Diodes; Implants; Isolation technology; Power dissipation; Power integrated circuits; Pulse width modulation; Substrates; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251243
