Title :
InGaAs quantum dot 1050 nm saturable absorber mirror: Investigation under high excitation condition
Author :
Jelmakas, E. ; Tomasiunas, R. ; Wilcox, K. ; Rafailov, E. ; Krestnikov, I.
Author_Institution :
Inst. of Mater. Sci. & Appl. Res., Vilnius Univ., Vilnius, Lithuania
fDate :
June 28 2009-July 2 2009
Abstract :
In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; optical design techniques; optical saturable absorption; quantum optics; semiconductor quantum dots; InGaAs; absorption bleaching; absorption femtosecond recovery kinetics; absorption saturation; carrier generation; carrier thermalization; high excitation condition; near-IR spectra; nonlinear absorption; quantum dot dynamics; resonance quantum energies; semiconductor quantum dot saturable absorber mirror design; wavelength 1050 nm; Absorption; Bleaching; Energy measurement; Indium gallium arsenide; Kinetic theory; Mirrors; Performance evaluation; Quantum dots; Resonance; Wavelength measurement; InGaAs quantum dots; femtosecond laser; saturable absorber;
Conference_Titel :
Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on
Conference_Location :
Azores
Print_ISBN :
978-1-4244-4825-8
Electronic_ISBN :
978-1-4244-4827-2
DOI :
10.1109/ICTON.2009.5185281
