InGaAs quantum dot 1050 nm saturable absorber mirror: Investigation under high excitation condition

Author

Jelmakas, E. ; Tomasiunas, R. ; Wilcox, K. ; Rafailov, E. ; Krestnikov, I.

Author_Institution

Inst. of Mater. Sci. & Appl. Res., Vilnius Univ., Vilnius, Lithuania

fYear

2009

fDate

June 28 2009-July 2 2009

Firstpage

1

Lastpage

2

Abstract

In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; optical design techniques; optical saturable absorption; quantum optics; semiconductor quantum dots; InGaAs; absorption bleaching; absorption femtosecond recovery kinetics; absorption saturation; carrier generation; carrier thermalization; high excitation condition; near-IR spectra; nonlinear absorption; quantum dot dynamics; resonance quantum energies; semiconductor quantum dot saturable absorber mirror design; wavelength 1050 nm; Absorption; Bleaching; Energy measurement; Indium gallium arsenide; Kinetic theory; Mirrors; Performance evaluation; Quantum dots; Resonance; Wavelength measurement; InGaAs quantum dots; femtosecond laser; saturable absorber;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on

Conference_Location

Azores

Print_ISBN

978-1-4244-4825-8

Electronic_ISBN

978-1-4244-4827-2

Type

conf

DOI

10.1109/ICTON.2009.5185281

Filename

5185281