DocumentCode
2731889
Title
Oxide Thinning in Shallow Trench Isolation
Author
Ghidini, Gabriella ; Bottini, Roberta ; Brazzelli, Daniela ; Galbiati, Nadia ; Mica, Isabella ; Morini, Adelaide ; Pavan, Alessia ; Polignano, Maria Luisa ; Vitali, Maria Elena
Author_Institution
Central R&D, STMicroelectron., Agrate Brianza
fYear
2006
fDate
26-30 March 2006
Firstpage
379
Lastpage
384
Abstract
Aim of this work is to study the thinning of thick HV gate oxides in flash and embedded flash processes due to the shallow trench isolation (STI) induced stress on oxide growth
Keywords
high-voltage engineering; isolation technology; semiconductor growth; semiconductor thin films; embedded flash process; oxide growth; oxide thinning; shallow trench isolation; thick HV gate oxides; Capacitors; Compressive stress; Current density; Oxidation; Research and development; Residual stresses; Temperature; Tensile stress; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251248
Filename
4017188
Link To Document