Impact of Metal Wet Etch on Device Characteristics and Reliability for Dual Metal Gate/High-k CMOS

Author

Zhang, Zhibo ; Hussain, Muhammad Mustafa ; Bae, Sang Ho ; Song, S.C. ; Lee, Byoung Hun

Author_Institution

Texas Instrum., Austin, TX

fYear

2006

fDate

26-30 March 2006

Firstpage

388

Lastpage

391

Abstract

This paper presents a comparative study of the impact of metal wet etch on carrier mobility and metal gate/high-k device characteristics and reliability. A TaSiN metal wet etch process that is highly selective to the underlying HfO₂ dielectric has been developed. While the metal wet etch slightly degraded the electron mobility, it did not affect hole mobility. It did not show any effect on fast transient charge trapping, and, in fact, improved negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI)

Keywords

CMOS integrated circuits; electron mobility; electron traps; etching; hafnium compounds; high-k dielectric thin films; hole mobility; semiconductor device reliability; silicon compounds; tantalum compounds; HfO₂; TaSiN; carrier mobility; charge trapping; device characteristics; device reliability; dual metal gate CMOS; electron mobility; high-k CMOS; hole mobility; metal wet etch; negative bias temperature instability; positive bias temperature instability; Degradation; Electron mobility; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Negative bias temperature instability; Niobium compounds; Titanium compounds; Wet etching; Carrier mobility; Dual metal gate CMOS; Gate dielectric reliability; High-k; Metal wet etch;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251250

Filename

4017190