• DocumentCode
    2732125
  • Title

    Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

  • Author

    Reisinger, H. ; Blank, O. ; Heinrigs, W. ; Mühlhoff, A. ; Gustin, W. ; Schlünder, C.

  • Author_Institution
    Infineon Technol., Corporate Reliability Methodology, Munchen
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    448
  • Lastpage
    453
  • Abstract
    We present a new direct VT measurement technique with arbitrary choice of drain voltage and a mus delay (factor of 1000 improvement) after stress. As shown this technique enables a meaningful comparison of data to theory (e.g. DeltaVT measurable as response to stress times from 100mus over 10 decades in time and an analysis of recovery over 11 decades in time) which may lead to a better understanding of NBTI. A fast precursor due to bulk trapping was found to significantly influence degradation slopes for all times. Based on a physical model - standard reaction/diffusion model plus fast bulk trapping -with just 3 fit parameters experimental degradation can be well modelled and degradation slopes <frac14 as well as > frac14 (both reported in literature) can be explained. A lifetime extrapolation based on this physical model is superior to the common straight line fit. There is no satisfying agreement of recovery data with reaction/diffusion theory. Further experimental and theoretical work is going to be needed
  • Keywords
    MOSFET; semiconductor device measurement; semiconductor device models; semiconductor device reliability; thermal stability; voltage measurement; NBTI; degradation behavior; drain voltage; mus delay; negative bias temperature instability; recovery behavior; ultra fast VT-measurements; Degradation; Delay; Extrapolation; Measurement techniques; Niobium compounds; Stress measurement; Time factors; Time measurement; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251260
  • Filename
    4017201