Title :
Effects of Hot Carrier Stress on Reliability of Strained-Si Mosfets
Author :
Dey, S. ; Agostinelli, M. ; Prasad, C. ; Wang, X. ; Shifren, L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Abstract :
The focus of this work is to demonstrate the effect of mechanical stress in the channel on the impact ionization rate (IIR) and on hot carrier reliability for both NMOS and PMOS devices. In addition, this study will explain the reason for the wide disagreement between published reports on this behavior. It is shown for the first time that the IIR reaches a maximum value with strain for NMOS and then reduces as higher levels of strain are applied. Compressive strained PMOS devices do not show this peak in IIR
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; hot carriers; impact ionisation; semiconductor device reliability; silicon; CMOS IC; NMOS; PMOS; hot carrier stress effects; hot electron degradation; impact ionization rate; mechanical stress; reliability; strained Si MOSFETS; Capacitive sensors; Compressive stress; Hot carriers; Impact ionization; MOS devices; MOSFETs; Photonic band gap; Scattering; Strain measurement; Tensile stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251262
