• DocumentCode
    2732195
  • Title

    New Insights into Recovery Characteristics Post NBTI Stress

  • Author

    Parthasarathy, C.R. ; Denais, M. ; Huard, V. ; Ribes, G. ; Vincent, E. ; Bravaix, A.

  • Author_Institution
    STMicroelectron., Crolles
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    471
  • Lastpage
    477
  • Abstract
    In this work, we investigate recovery characteristics post NBTI stress when the recovery bias remains negative but lower in magnitude than the stress bias, consolidating the viewpoint involving role of hole trapping during NBTI degradation. We show that successive negative recovery biases can be applied to view trapping and detrapping behavior explicitly
  • Keywords
    MOSFET; hole traps; thermal stability; thermal stresses; NBTI degradation; detrapping behavior; hole trapping; post NBTI stress; recovery bias; recovery characteristics; stress bias; view trapping; Current measurement; Data mining; Degradation; MOSFETs; Niobium compounds; Plasma measurements; Plasma temperature; Stress measurement; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251264
  • Filename
    4017205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2732195