Title :
New Insights into Recovery Characteristics Post NBTI Stress
Author :
Parthasarathy, C.R. ; Denais, M. ; Huard, V. ; Ribes, G. ; Vincent, E. ; Bravaix, A.
Author_Institution :
STMicroelectron., Crolles
Abstract :
In this work, we investigate recovery characteristics post NBTI stress when the recovery bias remains negative but lower in magnitude than the stress bias, consolidating the viewpoint involving role of hole trapping during NBTI degradation. We show that successive negative recovery biases can be applied to view trapping and detrapping behavior explicitly
Keywords :
MOSFET; hole traps; thermal stability; thermal stresses; NBTI degradation; detrapping behavior; hole trapping; post NBTI stress; recovery bias; recovery characteristics; stress bias; view trapping; Current measurement; Data mining; Degradation; MOSFETs; Niobium compounds; Plasma measurements; Plasma temperature; Stress measurement; Titanium compounds; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251264
