• DocumentCode
    2732264
  • Title

    In-situ and ex-situ studies of molybdenum thin films deposited by rf and dc magnetron sputtering

  • Author

    Khatri, H. ; Collins, R.W. ; Marsillac, S.

  • Author_Institution
    Center for Photovoltaics Innovation & Commercialization, Univ. of Toledo, Toledo, OH, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    In-situ RTSE was used to characterize the complex dielectric functions (ε) of rf and dc magnetron sputtered Mo thin films deposited onto soda-lime glass (SLG) substrates. Distinct features in the evolution of the dielectric functions with bulk layer thickness for rf and dc films are attributed to differences in void volume fraction and Drude free-electron relaxation time. Both rf and dc sputtered Mo thin films follow a similar trend of strain variation with argon pressure. The increased grain size, as well as smoother film morphology for the dc films compared to the rf films, were both confirmed by XRD and AFM measurements. It was also observed that increased deposition pressures lead to increased resistivities for both processes, with lower values for the dc films.
  • Keywords
    semiconductor thin films; solar cells; sputtering; substrates; ternary semiconductors; DC magnetron sputtering; Drude free-electron relaxation time; RF magnetron sputtering; argon pressure; dielectric functions; molybdenum thin films; soda-lime glass substrates; volume fraction; Argon; Magnetic films; Magnetic resonance imaging; Optical films; Photonics; Radio frequency; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614087
  • Filename
    5614087