Title :
Time-to-Fail Extraction Model for the "Mixed-Mode" Reliability of High-Performance SiGe Bipolar Transistors
Author :
Panko, Danielle ; Vanhoucke, T. ; Campos, Richard ; Hurkx, G.A.M.
Author_Institution :
Philips Semicond. Fishkill, Hopewell Junction, NY
Abstract :
We present a mixed-mode reliability time-to-fail model for high-performance SiGe HBTs. We systematically extract model parameters for 10% current-gain (hFE) degradation as function of stress parameters VMCB and IE over multiple orders of empirical drift data. The model also includes VBE readout and geometry scalings
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device reliability; SiGe; current-gain degradation; high-performance bipolar transistors; mixed-mode reliability; stress parameters; time-to-fail extraction model; Bipolar transistors; Data mining; Degradation; Geometry; Germanium silicon alloys; Iron; Silicon germanium; Solid modeling; Stress; Virtual manufacturing; avalanche; base current degradation; bipolar transistor; high-performance; mixed-mode; reliability;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251271
