Title :
A new self-limited growth for the fabrication of atomically uniform quantum wires and quantum dots
Author :
Wang, Xue-Lun ; Ogura, Mutsuo ; Matsuhata, Hirofumi
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
Abstract :
A new self-limited growth based on the control of surface migration of Ga atoms during now rate modulation epitaxial growth of GaAs on patterned substrates is demonstrated. By the use of this new growth technique, atomically uniform GaAs quantum wires and quantum dots can be realized easily, despite the existence of pattern size fluctuations in the initial substrate induced by pattern preparation processes
Keywords :
III-V semiconductors; gallium arsenide; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; vapour phase epitaxial growth; GaAs; atomically uniform quantum wires; fabrication; pattern preparation processes; pattern size fluctuations; patterned substrates; quantum dots; rate modulation epitaxial growth; self-limited growth; surface migration; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Fabrication; Fluctuations; Gallium arsenide; Quantum dots; Substrates; US Department of Transportation; Wires;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711565
