Title :
Retention Reliability of FinFET SONOS Device
Author :
Lee, Jong Jin ; Lee, Se Hoon ; Chae, Heesoon ; Choi, Byung Yong ; Sung, Suk-Kang ; Kim, Seok Pil ; Cho, Eun Suk ; Lee, Choong Ho ; Park, Donggun
Author_Institution :
Device Res. Team, Samsung Electron. Co. Ltd., Yongin
Abstract :
This paper presents the retention reliability of the FinFET SONOS flash memory. By understanding the charge loss mechanisms of the SONOS structure, a new approach for the prediction of long term retention lifetime have been proposed. The comparison between the thermal-accelerated and field-accelerated lifetime has been demonstrated
Keywords :
MOSFET circuits; circuit reliability; flash memories; FinFET SONOS flash memory; charge loss mechanisms; field-accelerated lifetime; long term retention lifetime; retention reliability; thermal-accelerated lifetime; Acceleration; Cities and towns; Electrons; FinFETs; Flash memory; Life estimation; Lifetime estimation; SONOS devices; Temperature; Tunneling; FinFET; SONOS; field acceleration; lifetime; retention; thermal acceleration;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251274
