Three decades of our graduate research and education in compound semiconductor materials and devices

Author

Eastman, Lester F.

Author_Institution

Cornell Univ., Ithaca, NY, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

4

Lastpage

8

Abstract

In the 37 years of activity in Cornell University´s research on compound semiconductor materials and devices, much has been discovered, and many students have been educated. The materials include GaAs, AlGaAs, InGaAs, InAlAs, InGaP, GaN, AlGaN, and InN. The devices have included microwave MESFETs, HEMTs, and HBTs, as well as semiconductor lasers for high speed modulation. The students and results have been hired and transferred to industry, where they have made strong contributions to devices for radar and communication.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor lasers; wide band gap semiconductors; AlGaAs; AlGaN; GaAs; GaN; HBT; HEMT; InAlAs; InGaAs; InGaP; InN; compound semiconductor materials/devices; graduate research/education; high speed modulation semiconductor lasers; microwave MESFET; radar/communication devices; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; Indium compounds; Indium gallium arsenide; MESFETs; Microwave devices; Optical materials; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146724

Filename

1146724