Title :
Three-dimensional integration in silicon electronics
Author :
Tiwari, Sandip ; Kim, H.-S. ; Kim, S. ; Kumar, A. ; Liu, C.C. ; Xue, L.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
As silicon electronics reaches length scales of 100 to 10 nm, device densities of 109 to 1011 cm-2, interconnect densities of 1010 to 1012 cm-2, and applications across the spectrum of digital, analog, and mixed-signal domain, a number of key issues arise related to maintaining the improvement in performance, cost, power, and designability. Three-dimensional integration incorporating planar transistors offers interesting new directions for continuing improvements. Adaptive modifications of the planar transistors offer higher scalability and functionality, higher vertical interconnectivity in between device planes can reduce interconnect delays, higher programmability using configurable elements can provide efficient signal and energy flow, higher digital-analog isolation using ground-planes can provide cross-talk improvements for mixed-signal applications, and a power-aware design can allow control of temperature and power dissipation.
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit design; integrated circuit interconnections; integrated circuit manufacture; interference (signal); low-power electronics; mixed analogue-digital integrated circuits; programmable circuits; thermal management (packaging); 100 to 10 nm; CMOS; IC performance/cost/power/designability; SRAM; Si; Si electronics 3D integration; analog IC; configurable element programmability; cross-talk reduction; device density; device plane vertical interconnectivity; digital IC; digital-analog isolation; functionality; ground-planes; interconnect delays; interconnect density; mixed-signal IC; planar transistor adaptive modifications; power dissipation/temperature control; power-aware design; scalability; signal/energy flow; silicon electronics length scales; Adaptive control; Costs; Delay; Digital-analog conversion; Power dissipation; Programmable control; Scalability; Signal design; Silicon; Temperature control;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146728