DocumentCode :
2732459
Title :
Analysis of carbon nanotube based Through Silicon Vias
Author :
Kannan, Sukeshwar ; Gupta, Anurag ; Kim, Bruce C. ; Mohammed, Falah ; Ahn, Byoungchul
Author_Institution :
Univ. of Alabama, Tuscaloosa, AL, USA
fYear :
2010
fDate :
1-4 June 2010
Firstpage :
51
Lastpage :
57
Abstract :
In this paper we have provided analysis of carbon nanotube (CNT) based Through Silicon Vias (TSVs) for package interconnects. The package interconnects are fundamental bottlenecks to achieving high performance and reliability. We have provided electrical modeling and performed simulations on TSV with copper and carbon nanotubes. The results from the CNT-based TSVs were greatly superior to conventional vias with copper.
Keywords :
Carbon nanotubes; Conducting materials; Copper; Fabrication; Gold; Semiconductor device packaging; Silicon; Space technology; Thermal conductivity; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV, USA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2010.5490885
Filename :
5490885
Link To Document :
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