Dopant Imaging and Profiling of Wide-Band-Gap Devices by Secondary Electron Potential Contrast

Author

Buzzo, M. ; Ciappa, M. ; Stangoni, M. ; Fichtner, W.

Author_Institution

Infineon Technol., Villach

fYear

2006

fDate

26-30 March 2006

Firstpage

560

Lastpage

565

Abstract

Secondary electron potential contrast in scanning electron microscopy is proposed as the method of choice for two-dimensional dopant imaging and profiling of wide-band-gap semiconductor devices, including SiC MOSFETs, SiC JFETs, quantum wells, and VCSEL lasers. After a review of the physical principles governing the signal generation, the quantitative capabilities of this technique are assessed with applications to test structures and real devices

Keywords

MOSFET; doping profiles; junction gate field effect transistors; scanning electron microscopy; semiconductor device testing; semiconductor quantum wells; silicon compounds; surface emitting lasers; wide band gap semiconductors; 2D dopant imaging; 2D dopant profiling; SiC; SiC JFET; SiC MOSFET; VCSEL lasers; quantitative capabilities; quantum wells; real devices; scanning electron microscopy; secondary electron potential contrast; test structures; wide-band-gap devices; JFETs; Laser theory; MOSFETs; Quantum well lasers; Scanning electron microscopy; Semiconductor devices; Semiconductor lasers; Signal generators; Silicon carbide; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251279

Filename

4017220