Title :
100 A and 3.1 kV 4H-SiC GTO thyristors
Author :
Van Campen, Stephen ; Ezis, Andris ; Zingaro, John ; Storaska, Garrett ; Clarke, R. Chris ; Elliott, Kevin ; Temple, Vic ; Hits, Dmitry ; Thompson, Mark ; Roe, Kris ; Hansen, Todd
Author_Institution :
Northrop Grumman, Baltimore, MD, USA
Abstract :
In this paper, we report on asymmetric SiC GTOs (gate turn-off thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm×1 mm GTOs connected in parallel has demonstrated 100 A of switching current capability. This is the highest current reported to date with GTOs designed for greater than 3 kV forward blocking voltage. GTOs fabricated from the same wafer have achieved a forward blocking voltage of 3.1 kV, which was the testing limit of the instrumentation. This represents a record high breakdown voltage for GTOs with a drift layer thickness of 30 μm. These GTOs also demonstrated record low leakage currents of <5 μA at the forward blocking voltage of 3.1 kV.
Keywords :
leakage currents; modules; semiconductor device breakdown; semiconductor device measurement; semiconductor device packaging; silicon compounds; thyristors; wide band gap semiconductors; 1 mm; 100 A; 3 kV; 3.1 kV; 30 micron; 5 muA; GTO modules; SiC; asymmetric 4H-SiC GTO thyristors; breakdown voltage; drift layer thickness; forward blocking voltage; gate turn-off thyristors; low leakage currents; parallel connected thyristors; switching current; Current density; Doping; Electric breakdown; Fabrication; Silicon carbide; Substrates; Temperature; Thermal conductivity; Thyristors; Voltage;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146732
