DocumentCode :
2732631
Title :
Time-Resolved and Stroboscopic EBIC Analyses on Dynamically Biased Active Devices
Author :
Pugatschow, A. ; Geinzer, T. ; Heiderhoff, R. ; Niedernostheide, F.-J. ; Balk, L.J.
Author_Institution :
Bergische Univ. Wuppertal
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
602
Lastpage :
607
Abstract :
Electron beam induced current (EBIC) microscopy is applied for time-resolved and stroboscopic analyses. For the first time, it is possible to generate EBIC maps of dynamically biased devices using a novel setup. This technique allows investigations of diffusion and drift processes as well as variations of electric field distributions inside an active device
Keywords :
EBIC; diffusion; electric field measurement; semiconductor device measurement; EBIC microscopy; diffusion processes; drift processes; dynamically biased active devices; electric field distributions; electron beam induced current microscopy; stroboscopic EBIC analyses; time-resolved EBIC analyses; Charge carrier processes; Charge carriers; Electron beams; Information analysis; Microscopy; P-i-n diodes; Semiconductor devices; Semiconductor diodes; Signal resolution; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251285
Filename :
4017226
Link To Document :
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