DocumentCode
2732631
Title
Time-Resolved and Stroboscopic EBIC Analyses on Dynamically Biased Active Devices
Author
Pugatschow, A. ; Geinzer, T. ; Heiderhoff, R. ; Niedernostheide, F.-J. ; Balk, L.J.
Author_Institution
Bergische Univ. Wuppertal
fYear
2006
fDate
26-30 March 2006
Firstpage
602
Lastpage
607
Abstract
Electron beam induced current (EBIC) microscopy is applied for time-resolved and stroboscopic analyses. For the first time, it is possible to generate EBIC maps of dynamically biased devices using a novel setup. This technique allows investigations of diffusion and drift processes as well as variations of electric field distributions inside an active device
Keywords
EBIC; diffusion; electric field measurement; semiconductor device measurement; EBIC microscopy; diffusion processes; drift processes; dynamically biased active devices; electric field distributions; electron beam induced current microscopy; stroboscopic EBIC analyses; time-resolved EBIC analyses; Charge carrier processes; Charge carriers; Electron beams; Information analysis; Microscopy; P-i-n diodes; Semiconductor devices; Semiconductor diodes; Signal resolution; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251285
Filename
4017226
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