DocumentCode
2732669
Title
Barrier technology providing exceptional stability of CIGS devices under accelerated damp heat conditions
Author
DeGroot, Marty W. ; Elowe, Paul R. ; Stempki, Matthew
Author_Institution
Dow Solar Solutions, Dow Chem. Co., Midland, MI, USA
fYear
2010
fDate
20-25 June 2010
Abstract
Parallel to rapid prototype testing for moisture barrier performance, extensive failure mode analyses of inorganic direct cell coatings for CIGS solar cells have led to important conclusions regarding barrier degradation during exposure. Based on these analyses, a new strategy for direct cell barrier film technology has been developed that eliminates the primary root causes of failure. This approach provides exceptional damp heat stability to CIGS devices, even in the absence of additional encapsulation technology. Evaluation of time-to-failure data resulted in characteristic lifetime estimates of >1500 h at 85°C/85% RH for the new barrier film approach, compared to ~500 h for various silicon nitride based films under the same conditions. In fact, laboratory scale CIGS devices with the improved direct cell coating show >70% probability of surpassing 1000 h under damp heat stress and several cells have survived >3000 h under these conditions with less than 10% reduction in efficiency.
Keywords
elemental semiconductors; solar cells; CIGS solar cells; accelerated damp heat conditions; barrier degradation; damp heat stress; direct cell barrier film technology; exceptional damp heat stability; silicon nitride based films; temperature 85 degC; Argon; Artificial intelligence; Heating; Image resolution; Optical films; Optical imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5614108
Filename
5614108
Link To Document