• DocumentCode
    2732669
  • Title

    Barrier technology providing exceptional stability of CIGS devices under accelerated damp heat conditions

  • Author

    DeGroot, Marty W. ; Elowe, Paul R. ; Stempki, Matthew

  • Author_Institution
    Dow Solar Solutions, Dow Chem. Co., Midland, MI, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Parallel to rapid prototype testing for moisture barrier performance, extensive failure mode analyses of inorganic direct cell coatings for CIGS solar cells have led to important conclusions regarding barrier degradation during exposure. Based on these analyses, a new strategy for direct cell barrier film technology has been developed that eliminates the primary root causes of failure. This approach provides exceptional damp heat stability to CIGS devices, even in the absence of additional encapsulation technology. Evaluation of time-to-failure data resulted in characteristic lifetime estimates of >1500 h at 85°C/85% RH for the new barrier film approach, compared to ~500 h for various silicon nitride based films under the same conditions. In fact, laboratory scale CIGS devices with the improved direct cell coating show >70% probability of surpassing 1000 h under damp heat stress and several cells have survived >3000 h under these conditions with less than 10% reduction in efficiency.
  • Keywords
    elemental semiconductors; solar cells; CIGS solar cells; accelerated damp heat conditions; barrier degradation; damp heat stress; direct cell barrier film technology; exceptional damp heat stability; silicon nitride based films; temperature 85 degC; Argon; Artificial intelligence; Heating; Image resolution; Optical films; Optical imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614108
  • Filename
    5614108