Title :
High Brightness Ingan Leds Degradation at High Injection Current Bias
Author :
Levada, S. ; Meneghini, Matteo ; Zanoni, Enrico ; Buso, Simone ; Spiazzi, Giorgio ; Meneghesso, Gaudenzio
Author_Institution :
Dept. of Inf. Eng., Padova Univ.
Abstract :
In this work, we report on the results of a reliability evaluation, in terms of electrical characteristics, stability and optical output power maintenance carried out on high brightness GaN/InGaN blue LEDs. Constant and pulsed bias where investigated over devices with and without heat sink in order to identify the influence of self-heating on the devices reliability. Several degradation modes have been identified such as increase of reverse and generation/recombination current, increase of the series resistance and decrease in the optical emitted power
Keywords :
III-V semiconductors; brightness; gallium compounds; indium compounds; light emitting diodes; semiconductor device reliability; GaN-InGaN; LED degradation; LED reliability; blue LED; devices reliability; electrical characteristics; generation current; high brightness; high injection current bias; optical output power maintenance; pulsed bias; recombination current; reliability evaluation; stability; Brightness; Degradation; Electric variables; Gallium nitride; Heat sinks; Light emitting diodes; Maintenance; Optical pulses; Power generation; Stability; GaN; High Brightness; LED Reliability;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251289
