Effects of Nano-scale Schottky Barrier of Conductor-like Breakdown Path on Progressive Breakdown in MOSFET

Author

Lo, V.L. ; Pey, K.L. ; Tung, C.H. ; Ang, D.S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2006

fDate

26-30 March 2006

Firstpage

619

Lastpage

620

Abstract

The post-breakdown electrical characteristics of a conductor-like breakdown (BD) path formed in ultrathin gate dielectric are found to exhibit Schottky behavior. The presence of a nano-scale Schottky barrier is vital in controlling the leakage current conduction during progressive BD (PBD). As a result, it is expected that the growth of a BD path could be slowed down since there is a reduction in the effective stressing voltage across the BD path. This means that the leakage current evolution during PBD at nominal operating voltages will take a much longer time to reach a specific leakage current limit

Keywords

MOSFET; Schottky barriers; leakage currents; semiconductor device breakdown; MOSFET; PBD; conductor-like breakdown path; effective stressing voltage; leakage current conduction; nanoscale Schottky barrier effects; post-breakdown electrical characteristics; progressive breakdown; ultrathin gate dielectric; Dielectric breakdown; Dielectric substrates; Electric breakdown; Electric variables; Leakage current; MOSFET circuits; Microelectronics; Performance evaluation; Schottky barriers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251291

Filename

4017232