DocumentCode
2732744
Title
Reliability of Au-Ag alloy wire bonding
Author
Liu, Hai ; Chen, Qi ; Zhao, Zhenqing ; Wang, Qian ; Zeng, Jianfeng ; Chae, Jonghyun ; Lee, Jaisung
Author_Institution
Samsung Semicond. China R&D CO., Ltd., Su Zhou, China
fYear
2010
fDate
1-4 June 2010
Firstpage
234
Lastpage
239
Abstract
Au-Ag alloy wire is a low cost wire bonding solution instead of gold wire for IC packaging. Comparing with copper wire, Au-Ag wire has better productivity because it does not need protective gas and it is softer. The main issue of Au-Ag alloy wire bonding is its reliability in humidity environment. In present study, the bond parameters effect on PCT reliability was investigated. The correlation between the IMC profile and PCT lifetime was established. The IMC characteristic length was defined to express the relationship quantitatively. Meanwhile, The Au-Ag-Al IMC growth equation was obtained through HTS. It is found that the IMC growth rate is slower one order of magnitude than 99.99% gold wire.
Keywords
Bonding; Copper; Costs; Equations; Gold alloys; Humidity; Integrated circuit packaging; Productivity; Protection; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490906
Filename
5490906
Link To Document