• DocumentCode
    2732744
  • Title

    Reliability of Au-Ag alloy wire bonding

  • Author

    Liu, Hai ; Chen, Qi ; Zhao, Zhenqing ; Wang, Qian ; Zeng, Jianfeng ; Chae, Jonghyun ; Lee, Jaisung

  • Author_Institution
    Samsung Semicond. China R&D CO., Ltd., Su Zhou, China
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    234
  • Lastpage
    239
  • Abstract
    Au-Ag alloy wire is a low cost wire bonding solution instead of gold wire for IC packaging. Comparing with copper wire, Au-Ag wire has better productivity because it does not need protective gas and it is softer. The main issue of Au-Ag alloy wire bonding is its reliability in humidity environment. In present study, the bond parameters effect on PCT reliability was investigated. The correlation between the IMC profile and PCT lifetime was established. The IMC characteristic length was defined to express the relationship quantitatively. Meanwhile, The Au-Ag-Al IMC growth equation was obtained through HTS. It is found that the IMC growth rate is slower one order of magnitude than 99.99% gold wire.
  • Keywords
    Bonding; Copper; Costs; Equations; Gold alloys; Humidity; Integrated circuit packaging; Productivity; Protection; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490906
  • Filename
    5490906